SUMITOMO ELECTRIC DEVICE INNOVATIONS

Home
Site Map
Products New Products Optical Data Links Optical Devices Wireless Products Corporate

Preamplifier ICs

SEDI's unique Circuit with Excellent GaAs MESFET Process

  • High sensitivity
  • Excellent equivalent input noise current density
  • Wide bandwidth
  • High gain
  • High transimpedance
  • Wide dynamic range

Features

  • Operation up to 1.25 Gbit/s
  • +5.0V or +3.3V single power supply (All of Preamplifiers up to 1.25 Gbit/s)
  • F0100109B
  • F0100208B
  • F0100408B-02
  • F0100406B

Telecom (156 Mbit/s, 622 Mbit/s)

Specifications

Part Number Gain
Control
Supply
Voltage
(V)
S21
(dB)
fop
(MHz)
Ztp
(kΩ)
lnoise
(pA/√Hz)
Dice Size
(µm)
Feature Application
F0100109B AGC 3.3 or 5.0 38 130 27 1.1 820/820 Excellent overload, High gain 156 Mbit/s opticai
transmission sysrems
F0100106B BBB 3.3 or 5.0 32 250 16 0.8 820/820 High sensitivity
F0100211B AGC 3.3 35 300 10 1.4 660/720 Good overload 622 Mbit/s opticai
transmission sysrems
F0100208B BBB 3.3 or 5.0 29 300 7 1.3 820/820 High sensitivity

BBB (Bit by Bit) means transimpedance for each bit is controlled optimum according to optical signal power of each bit.

Access (GE-PON, G-PON, etc.)

Specifications

Part Number Gain
Control
Supply
Voltage
(V)
S21
(dB)
fop
(MHz)
Ztp
(kΩ)
lnoise
(pA/√Hz)
Dice Size
(µm)
Feature Application
F0100404B N/A 3.3 or 5.0 16 1,900 0.6 9.7 820/820 Zt constant 1.25 Gbit/s opticai
transmission sysrems
F0100406B AGC 3.3 30 1,000 4 3.5 660/720 High sensitivity Receivers for
GE-PON ONU
F0100408B BBB 3.3 21 1,550 1 7.0 660/720 For burst mode Receivers for
GE-PON OLT
F0100408B-02 BBB 3.3 21 1,550 1 7.0 660/720 For burst mode, Operating chip
backside temp. : -40°C to 95°C
Receivers for
G-PON 1.25 Gbit/s OLT

BBB (Bit by Bit) means transimpedance for each bit is controlled optimum according to optical signal power of each bit.

(C) 2007 Sumitomo Electric Industries, Ltd.
Using This Site Privacy Policy