Part Number | SG36F30S-D |
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Class | Power GaN > GaN HEMTs for Base Station > Driver and Final Stage |
PKG Code | Z2D |
Function | High Voltage - Plastic GaN-HEMT |
Features |
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Datasheet | ( ![]() |
Description | SEI' s GaN-HEMT offers high efficiency, ease of matching, greater consistencyand broad bandwidth for high power L-band amplifiers with 50V operation, andgives you higher gain.This device target applications are driver stage and final stage of micro cell forbase transceiver station. |
Single / Twin | Single |
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Operation Freq. (GHz) | 3.3-3.7 |
Measurement Freq. (GHz) | 3.6 |
Psat Typ. (dBm) | 45.5 |
Pout (Ave.) (dBm) | 32 |
Gp @Pout(Ave.) Typ. (dB) | 17 |
ηd @Pout(Ave.) Typ. (%) | 12.5 |
VDS (V) | 50 |
IDS (DC) (mA) | 150 |
Rth Typ. (°C/W) | 5.5 |
Note | RF Parameter sample sizepcs. Criteria(accept/reject)=(0/1)Tc(op)=+25°CPsat : 10%-duty RF pulse(DC supply constant)Pout(Ave.) : WCDMA(3GPP3.4 12-00)BS-1 64ch 85% clipping modulation(PAR=8.5dB@0.01%)Rth : Thermal resistance of channel to case(Not include the thermal resistance of substrate) |