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Product Information

Specifications

SG36F30S-D


Part Number SG36F30S-D
Class Power GaN > GaN HEMTs for Base Station  > Driver and Final Stage
PKG Code Z2D
Function High Voltage - Plastic GaN-HEMT
Features
  • High Voltage Operation : VDS=50V
  • High Power : 45.5dBm (typ.) @ Psat
  • High Efficiency: 52%(typ.) @ Psat
  • Power Gain : 17dB(typ.) @ f=3.6GHz
  • Proven Reliability
Datasheet ( PDF 440KB)
Description SEI' s GaN-HEMT offers high efficiency, ease of matching, greater consistency and broad bandwidth for high power L-band amplifiers with 50V operation, and gives you higher gain. This device target applications are driver stage and final stage of micro cell for base transceiver station.

Single / Twin Single
Operation Freq. (GHz) 3.3-3.7
Measurement Freq. (GHz) 3.6
Psat Typ. (dBm) 45.5
Pout (Ave.) (dBm) 32
Gp @Pout(Ave.) Typ. (dB) 17
ηd @Pout(Ave.) Typ. (%) 12.5
VDS (V) 50
IDS (DC) (mA) 150
Rth Typ. (°C/W) 5.5
Note RF Parameter sample sizepcs. Criteria(accept/reject)=(0/1) Tc(op)=+25°C Psat : 10%-duty RF pulse(DC supply constant) Pout(Ave.) : WCDMA(3GPP3.4 12-00)BS-1 64ch 85% clipping modulation(PAR=8.5dB@0.01%) Rth : Thermal resistance of channel to case(Not include the thermal resistance of substrate)

Package Information

Z2D Package
Z2D
Z2D

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