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Product Information

Specifications

SGNC320MK


Part Number SGNC320MK
Class Power GaN > GaN HEMTs for Base Station  > Peak Stage of Doherty Amplifier
Outline / Package Code MK
Function High Voltage - High Power GaN-HEMT
Features
Description SEI's GaN-HEMT offers high efficiency, ease of matching, greater consistency and broad bandwidth for high power L-band amplifiers with 50V operation, and gives you higher gain.
This new product is ideally suited for use in 0.9GHz LTE design requirements as it offers high gain, long term reliability and ease of use.
Datasheet ( PDF 365KB)

Frequency (GHz) 0.9
Psat Typ.(dBm) 55.0
Gp Typ. (dB) 16.5
VDS (V) 50
Rth Typ.(°C/W) 1.2
Note TC(op)=+25°C Psat : 10%-duty RF pulse(DC supply constant) Gp : Pout=3dB backoff point, 10%-duty RF pulse(DC supply constant:IDS(DC)=10mA)
Further Information
Simulation
S-Parameter *Login required
DXF files
Test Fixture *Login required
Documents
Load-Pull *Login required
ApplicationNote Mounting Instructions for Packaged FETs and MMICs
(PDF 124KB)

Package Information

MK Package
MK
MK

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