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Product Information

Specifications

EGN21C160I2D


Part Number EGN21C160I2D
Class Power GaN > GaN HEMTs for Base Station  > Final Stage
Outline / Package Code I2D
Function High Voltage - High Power GaN-HEMT
Features
Description SEI'sGaN-HEMT offers high efficiency, ease of matching, greater consistency and broad bandwidth for high power L-band amplifiers with 50Voperation, and gives you higher gain.
This new product is ideally suited for usefrom 1.8GHz to 2.2GHzW-CDMA & LTE design requirements as it offers high gain, long term reliabilityand ease of use.
Datasheet ( PDF 77KB)

Frequency (GHz) 2.14
Psat Typ.(dBm) 52.5
Pout (Ave.)Typ.(dBm) 44.5
Gp Typ. (dB) 18.0
ηd @Pout(Ave.) (%) 32
VDS (V) 50
IDS(DC) (mA) 600
Rth Typ.(°C/W) 1.4
Note TC(op)=+25°C Psat : 10%-duty RF pulse(DC supply constant) Pout(Ave.) : f0=2.145GHz,f1=2.145GHz,WCDMA(3GPP3.4 12-00)BS-1 64ch 85% cliping modulation(PAR=8.5dB@0.01%)

Package Information

I2D Package
I2D
I2D

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