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Product Information

Specifications

EGN21C030MK


Part Number EGN21C030MK
Class Power GaN > GaN HEMTs for Base Station  > Driver Stage
Outline / Package Code MK
Function High Voltage - High Power GaN-HEMT
Features
Description SEI's GaN-HEMT offers high efficiency, ease of matching, greater consistency and broad bandwidth for high power L-band amplifiers with 50V operation, and gives you higher gain.
This new product is ideally suited for use in 2.1GHz W-CDMA design requirements as it offers high gain, long term reliability and ease of use.
Datasheet ( PDF 361KB)

Frequency (GHz) 2.14
Psat Typ.(dBm) 45.0
Pout (Ave.)Typ.(dBm) 31.5
Gp Typ. (dB) 19
ηd @Pout(Ave.) (%) 12.5
VDS (V) 50
IDS(DC) (mA) 150
Rth Typ.(°C/W) 5.0
Note TC(op)=+25°C Psat : 10%-duty RF pulse(DC supply constant) Pout(Ave.) : CW
Further Information
Simulation
S-Parameter *Login required
DXF files
Test Fixture *Login required
Documents
ApplicationNote Mounting Instructions for Packaged FETs and MMICs
(PDF 124KB)

Package Information

MK Package
MK
MK

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