|Class||Power GaN > GaN HEMTs for Base Station > Final Stage|
|Outline / Package Code||I2D|
|Function||High Voltage - High Power GaN-HEMT|
|Description||SEI's GaN-HEMT offers high efficiency, ease of matching, greater consistency and broad bandwidth for high power L-band amplifiers with 50V operation, and gives you higher gain.
This new product is ideally suited for use from 1.8GHz to 2.0GHz W-CDMA & LTE design requirements as it offers high gain, long term reliabilityand ease of use.
|Gp Typ. (dB)||18.0|
|ηd @Pout(Ave.) (%)||35|
|Note||TC(op)=+25°CPsat : 10%-duty RF pulse(DC supply constant)Pout(Ave.) : WCDMA(3GPP3.4 12-00)BS-1 64ch 85% cliping modulation(PAR=8.5dB@0.01%)|