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Product Information

Specifications

EGNC210MK


Part Number EGNC210MK
Class Power GaN > GaN HEMTs for Base Station  > Final Stage
Outline / Package Code MK
Function High Voltage - High Power GaN-HEMT
Features
Description SEI's GaN-HEMT offers high efficiency, ease of matching, greater consistency and broad bandwidth for high power L-band amplifiers with 50V operation, and gives you higher gain.
This new product is ideally suited for use in 0.9GHz LTE design requirements as it offers high gain, long term reliability and ease of use.
Datasheet ( PDF 335KB)

Frequency (GHz) 0.9
Psat Typ.(dBm) 53.5
Pout (Ave.)Typ.(dBm) 45.5
Gp Typ. (dB) 17.5
ηd @Pout(Ave.) (%) 35
VDS (V) 50
IDS(DC) (mA) 750
Rth Typ.(°C/W) 1.1
Note TC(op)=+25°C Psat : 10%-duty RF pulse(DC supply constant) Pout(Ave.) : WCDMA(3GPP3.4 12-00)BS-1 64ch 85% cliping modulation(PAR=8.5dB@0.01%)
Further Information
Simulation
S-Parameter *Login required
DXF files
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Documents
Load-Pull *Login required
ApplicationNote Mounting Instructions for Packaged FETs and MMICs
(PDF 124KB)

Package Information

MK Package
MK
MK

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