HOME > Electron Devices > Internally Matched High Power GaAs FETs > FLM8596-8F

Product Information

Specifications

FLM8596-8F


Part Number FLM8596-8F
Class Power GaAs > Internally Matched High Power GaAs FETs
Outline / Package Code IB
Function X-Band Internally Matched FET
Features
Description The FLM8596-8F is a power GaAs FET that is internally matched for standard communication bands to provide optimum power and gain in a 50Ω system. Sumitomo Electric's stringent Quality Assurance Program assures the highest reliability and consistent performance.
Datasheet ( PDF 259KB)

Frequency f (GHz) 8.5-9.6
2tone test lM3 Typ. (dBc) -45
2tone test @Pout S.C.L. (dBm) 28.5
P1dB Typ. (dBm) 39
G1db.Typ (dB) 7.5
η add Typ.(%) 29
VDS Typ.(V) 10
IDS (DC) Typ. (mA) 2200
IDS (RF) Typ. (mA) 2200
Rth Typ.(°C/W) 3
Feature/Application •50Ω internally matched •No external matching •Optimized for each frequency band
Note Tc(op)=+25°C
Further Information
Simulation
S-Parameter *Login required
Documents
ApplicationNote Mounting Instructions for Packaged FETs and MMICs
(PDF 124KB)

Package Information

IB Package
IB
IB

Return to the top