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Product Information

Specifications

EGN26C160I2D


Part Number EGN26C160I2D
Class Power GaN > GaN HEMTs for Base Station  > Final Stage
Outline / Package Code I2D
Function High Voltage - High Power GaN-HEMT
Features
Description SEI's GaN-HEMT offers high efficiency, ease of matching, greater consistency and broad bandwidth for high power L-band amplifiers with 50V operation, and gives you higher gain.
This new product is ideally suited for use from 2.3GHz to 2.7GHz LTE design requirements as it offers high gain, long term reliability and ease of use.
Datasheet ( PDF 204KB)

Frequency (GHz) 2.6
Psat Typ.(dBm) 52.5
Pout (Ave.)Typ.(dBm) 44.5
Gp Typ. (dB) 16.0
ηd @Pout(Ave.) (%) 30
VDS (V) 50
IDS(DC) (mA) 600
Rth Typ.(°C/W) 1.4
Note TC(op)=+25°C Psat : 10%-duty RF pulse(DC supply constant) Pout(Ave.) : WCDMA(3GPP3.4 12-00)BS-1 64ch 85% cliping modulation(PAR=8.5dB@0.01%)
Further Information
Simulation
S-Parameter *Login required
Documents
Load-Pull *Login required
ApplicationNote Mounting Instructions for Packaged FETs and MMICs
(PDF 124KB)

Package Information

I2D Package
I2D
I2D

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