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Product Information

Specifications

SGNE010MK


Part Number SGNE010MK
Class Power GaN > GaN HEMTs for Radar  > Driver Stage
Outline / Package Code MK
Function High Voltage - High Power GaN-HEMT
Features
  • High Voltage Operation: VDS=50V
  • High Power: 40.5dBm (typ.) @Psat
  • High Efficiency: 55% (typ.) @Psat
  • Liner Gain: 16.0dB (typ.) @f=3.5GHz
  • Proven Reliability
Description Sumitomo Electric's GaN-HEMT offers high efficiency, ease of matching, greater consistency and broad bandwidth for high power L-band amplifiers with 50V operation, and gives you higher gain.
This device target applications are low current and wide band applications for high voltage.
Datasheet ( PDF 377KB)

Frequency (GHz) 3.5
P3dB Min. (dBm) 40.5
GL. Min. (dB) 16
ηadd @P3dB Typ.(%) 55
VDS (V) 50
IDS(DC) (mA) 100
Rth Typ. (°C/W) 4.5
Condition CW
Note Tc(op)=+25°C
Further Information
Simulation
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Documents
Load-Pull *Login required
ApplicationNote Mounting Instructions for Packaged FETs and MMICs
(PDF 124KB)

Package Information

MK Package
MK
MK

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