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製品情報

Specifications

SGN26H180M1H


Part Number SGN26H180M1H
Class Power GaN > GaN HEMTs for Base Station  > Final Stage
Outline / Package Code M1H
Function High Voltage - High Power GaN-HEMT
Features
  • High Voltage Operation : VDS=50V
  • High Power : 52.5dBm (typ.) @ Psat
  • Proven Reliability
Description Sumitomo Electric's GaN-HEMT offers high efficiency, ease of matching, greater consistency and broad bandwidth for high power L-band amplifiers with 50V operation, and gives you higher gain. This new product is ideally suited for use from 2.3GHz to 2.7GHz W-CDMA and LTE design requirements as it offers high gain, long term reliability and ease of use.
Datasheet ( PDF 562KB)

Frequency (GHz) 2.65
Psat Typ.(dBm) *1 52.5
Pout (Ave.)Typ.(dBm) 44.5
Gp Typ. (dB) *2 16.5
VDS (V) 50
IDS(DC) (mA) 600
Rth Typ.(°C/W) 1.4
Note *1: 10%-duty RF pulse(DC supply constant)
*2: Pout=(Ave.) , CW modulation Signal (W-CDMA)
TC(op)=+25°C

Package Information

M1H Package
M1H
M1H

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