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製品情報

Specifications

FHX13X


Part Number FHX13X
Class Low-noise HEMTs > GaAs HEMTs
Function GaAs FET & HEMT Die
Features
Description The FHX13X, FHX14X are Super High Electron Mobility Transistor (SuperHEMTTM) intended for general purpose, ultra-low noise and high gain amplifiers in the 2-18GHz frequency range. The devices are well suited for telecommunication, DBS, TVRO, VSAT or other low noise applications. Sumitomo Electric's stringent Quality Assurance Program assures the highest reliability and consistent performance.
Datasheet ( PDF 375KB)

Noise figure NF Typ. (dB) 0.45
Associated Gain Gas Typ. (dB) 13
Drain Voltage VDS (V) 2
Drain Current lDS (mA) 10
Frequency f (GHz) 12
Application Low Noise Amp
Note Tc(op)=+25°C Conventional Chip
Further Information
Simulation
S-Parameter *Login required
Documents
ApplicationNote Quality Assurance for Bare-Die of wireless device
(PDF 518KB)

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