Part Number | EGN21C105I2D |
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Class | Power GaN > GaN HEMTs for Base Station > Final Stage |
Outline / Package Code | I2D |
Function | High Voltage - High Power GaN-HEMT |
Features |
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Description | Sumitomo Electric's GaN-HEMT offers high efficiency, ease of matching, greater consistency and broad bandwidth for high power L-band amplifiers with 50V operation, andgives you higher gain. This new product is ideally suited for use in 2.14GHz W-CDMA & LTE design requirements as it offers high gain, long term reliability and ease of use. |
Datasheet | ( 440KB) |
Frequency (GHz) | 2.14 |
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Psat Typ.(dBm) *1 | 50.3 |
Pout (Ave.)Typ.(dBm) | 42.0 |
Gp Typ. (dB) *2 | 18.0 |
ηd @Pout(Ave.) (%) | 32 |
VDS (V) | 50 |
IDS(DC) (mA) | 400 |
Rth Typ.(°C/W) | 2.0 |
Note | TC(op)=+25°C Psat : 10%-duty RF pulse(DC supply constant) Pout(Ave.) : f0=2.145GHz,f1=2.145GHz,WCDMA(3GPP3.4 12-00)BS-1 64ch 85% cliping modulation(PAR=8.5dB@0.01%) |
Simulation | |
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S-Parameter | *Login required |
Documents | |
Load-Pull | *Login required |
ApplicationNote |
Mounting Instructions for Packaged FETs and MMICs ( 124KB) |