製品情報
Specifications
EGN16C105MK
| Part Number | EGN16C105MK |
|---|---|
| Class | Power GaN > GaN HEMTs for Base Station > Final Stage |
| Outline / Package Code | MK |
| Function | High Voltage - High Power GaN-HEMT |
| Features |
|
| Description | Sumitomo Electric's GaN-HEMT offers high efficiency, ease of matching, greater consistency and broad bandwidth for high power L-band amplifiers with 50V operation, and gives you higher gain. This new product is ideally suited for use in 1.5GHz W-CDMA & LTE design requirements as it offers high gain, long term reliability and ease of use. |
| Datasheet | (  790KB) |
| Frequency (GHz) | 1.6 |
|---|---|
| Psat Typ.(dBm) *1 | 50.5 |
| Pout (Ave.)Typ.(dBm) | 42.5 |
| Gp Typ. (dB) *2 | 19.0 |
| ηd @Pout(Ave.) (%) | 33 |
| VDS (V) | 50 |
| IDS(DC) (mA) | 400 |
| Rth Typ.(°C/W) | 2.0 |
| Note | TC(op)=+25°C Psat : 10%-duty RF pulse(DC supply constant) Pout(Ave.) : WCDMA(3GPP3.4 12-00)BS-1 64ch 85% cliping modulation(PAR=8.5dB@0.01%) |
Further Information
| Simulation | |
|---|---|
| S-Parameter | *Login required |
| DXF files | |
| Test Fixture | *Login required |
| Documents | |
| ApplicationNote |
Mounting Instructions for Packaged FETs and MMICs ( 124KB)
|
