製品情報
Specifications
EGN21C030MK
| Part Number | EGN21C030MK |
|---|---|
| Class | Power GaN > GaN HEMTs for Base Station > Driver Stage |
| Outline / Package Code | MK |
| Function | High Voltage - High Power GaN-HEMT |
| Features |
|
| Description | Sumitomo Electric's GaN-HEMT offers high efficiency, ease of matching, greater consistency and broad bandwidth for high power L-band amplifiers with 50V operation, and gives you higher gain. This new product is ideally suited for use in 2.1GHz W-CDMA design requirements as it offers high gain, long term reliability and ease of use. |
| Datasheet | (  361KB) |
| Frequency (GHz) | 2.14 |
|---|---|
| Psat Typ.(dBm) | 45.0 |
| Pout (Ave.)Typ.(dBm) | 31.5 |
| Gp Typ. (dB) | 19 |
| ηd @Pout(Ave.) (%) | 12.5 |
| VDS (V) | 50 |
| IDS(DC) (mA) | 150 |
| Rth Typ.(°C/W) | 5.0 |
| Note | TC(op)=+25°C Psat : 10%-duty RF pulse(DC supply constant) Pout(Ave.) : CW |
Further Information
| Simulation | |
|---|---|
| S-Parameter | *Login required |
| DXF files | |
| Test Fixture | *Login required |
| Documents | |
| ApplicationNote |
Mounting Instructions for Packaged FETs and MMICs ( 124KB)
|
