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製品情報

Specifications

SMM5729XZ


Part Number SMM5729XZ
Class Power GaAs > E-band MMICs  > PA and LNAs
Outline / Package Code WLCSP
Features
  • SMM5728XZ and SMM5729XZ have mirror symmetric layouts and may be used parallel combining.
  • Wafer Level Chip Size Package with Solder Ball
  • 25dB Gain
  • Output power of 17 dBm at 1dB gain compression
  • 24.5 dBm output Third Order Intercept (OIP3)
Description The Power Amplifier is a eight stage GaAs HEMT MMIC which operates between 71 and 76 GHz.
The Power Amplifier features small signal gain of 25dB, output power of 17 dBm at 1dB gain compression and saturated power of 20 dBm.
The flip chip die can be used in solder reflow process.
Sumitomo Electric's stringent Quality Assurance Program assures the highest reliability and consistent performance.
Datasheet ( PDF 817KB)

Frequency Range f (GHz) 71-76
Noise Figure NF dB (Typ.) 12
Gain dB (Typ.) 25
Output Power at 1dB G.C.P. P1dB dBm (Typ.) 17
Drain-Source Voltage VDD (V) 6
Drain Current IDD mA (Typ.) 410
Function / Application PA
Note Tc=+25°C
Documents
ApplicationNote Reliability test report of mounting temperature cycling for WLCSP
(PDF 345KB)

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