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製品情報

Specifications

EGN21C320IV


Part Number EGN21C320IV
Class Power GaN > GaN HEMTs for Base Station  > Final Stage
Outline / Package Code IV
Function High Voltage - High Power GaN-HEMT
Features
  • High Voltage Operation: VDS=50V
  • High Power: 55.0dBm (Typ.) @Psat
  • High Efficiency: 65% (Typ.) @Psat
  • Power Gain: 18dB (Typ.) @f=2.14GHz
  • Proven Reliability
Description Sumitomo Electric's GaN-HEMT offers high efficiency, ease of matching, greater consistency and broad bandwidth for high power L-band amplifiers with 50V operation, and gives you higher gain.
This new product is ideally suited for use in 2.14GHz W-CDMA & LTE design requirements as it offers high gain, long term reliability and ease of use.
Datasheet ( PDF 171KB)

Frequency (GHz) 2.14
Psat Typ.(dBm) *1 55.0
Pout (Ave.)Typ.(dBm) 47.0
Gp Typ. (dB) *2 18.0
ηd @Pout(Ave.) (%) 31
VDS (V) 50
IDS(DC) (mA) 1100
Rth Typ.(°C/W) 0.8
Note TC(op)=+25°C Psat : 10%-duty RF pulse(DC supply constant) Pout(Ave.) : f0=2.145GHz,f1=2.145GHz,WCDMA(3GPP3.4 12-00)BS-1 64ch 85% cliping modulation(PAR=8.5dB@0.01%)
Documents
ApplicationNote Mounting Instructions for Packaged FETs and MMICs
(PDF 124KB)

Package Information

IV Package
IV
IV

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