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製品情報

Specifications

SMM5730XZ


Part Number SMM5730XZ
Class Power GaAs > E-band MMICs  > PA and LNAs
Outline / Package Code WLCSP
Features
  • SMM5730XZ and SMM5731XZ have mirror symmetric layouts and may be used parallel combining.
  • Wafer Level Chip Size Package with Solder Ball
  • 27dB Gain
  • Output power of 17 dBm at 1dB gain compression
  • 24.5 dBm output Third Order Intercept (OIP3)
Description The Power Amplifier is a eight stage GaAs HEMT MMIC which operates between 81 and 86 GHz.
The Power Amplifier features small signal gain of 27dB, output power of 17 dBm at 1dB gain compression and saturated power of 20 dBm.
The flip chip die can be used in solder reflow process.
Sumitomo Electric's stringent Quality Assurance Program assures the highest reliability and consistent performance.
Datasheet ( PDF 1109KB)

Frequency Range f (GHz) 81-86
Noise Figure NF dB (Typ.) 12
Gain dB (Typ.) 27
Output Power at 1dB G.C.P. P1dB dBm (Typ.) 17
Drain-Source Voltage VDD (V) 6
Drain Current IDD mA (Typ.) 410
Function / Application PA
Note Tc=+25°C
Documents
ApplicationNote Reliability test report of mounting temperature cycling for WLCSP
(PDF 345KB)

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